©
1996
DATA SHEET
Silicon Power Transistor
2SA1988
DESCRIPTION
The 2SA1988 is PNP Silicon Power Transistor that
designed for audio frequency power amplifier.
FEATURES
• High Voltage VCEO = −200 V
• DC Current Gain h
FE = 70 to 200
• TO-3P Package
ORDERING INFORMATION
Type Number Package
2SA1988 MP-88
PNP SILICON TRANSISTOR
POWER AMPLIFIER
INDUSTRIAL USE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO −200 V
Collector to Emitter Voltage V
CEO −200 V
Emitter to Base Voltage V
EBO −5.0 V
Collector Current (DC) I
C (DC) −7.0 A
Collector Current (pulse) I
C (pulse) *1 -10 A
Total Power Dissipantion P
2 *2 100 W
JunctionTemperature T
J 150 °C
Storage Tempreature T
stg −55 to +150 °C
*1 PW ≤ 300
µ
s, Duty Cycle ≤ 10 % *2 TC = 25 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO −50
µ
AVCB = −200 V, IE = 0
Emitter Cutoff Current IEBO −50
µ
AVEB = −3.0 V, IC = 0
DC Current Gain hFE1 70 200 − VCE = −5.0 V, IC = −1.0 A ∗
DC Current Gain hFE2 20 − VCE = −5.0 V, IC = −3.5 A ∗
Collector Saturation Voltage VCE (sat) −0.6 −2.0 V IC = −5.0 V, IE = −0.5 V ∗
Base Saturation Voltage VBE (sat) −1.3 −2.0 V IC = −5.0 V, IE = −0.5 V ∗
Gain Band width Product fT 40 MHz VCE = −5.0 V, IC = 1.0 mA
Output Capacitance Cob 270 pF VCB = −10 V, IC = 0, f = 1.0 MHz
∗ Pulse Test PW ≤ 350
µ
s, Duty Cycle ≤ 2 %
PACKAGE DIMENSIONS
The information in this document is subject to change without notice.
MP-88
1.Base
2.Collector
3.Emitter
4.Fin (Collector)
1 2 3
15.7 MAX. 3.2±0.2
4.5±0.2
5.0 1.03.4MAX.
20.5MAX.19 MIN.
2.2±0.2
5.45 5.45
1.0±0.2
4
4.7 MAX.
1.5
2.8±0.10.6±0.1
φ
Document No. D11176EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
