2SA1981
-0.8 A, -35 V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
26-Jan-2011 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Base
Emitte
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain
Complementary Pair with 2SC5344
CLASSIFICATION OF h
FE
Product-Rank 2SA1981-O 2SA1981-Y
Range 100~200 160~320
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
-35 V
Collector to Emitter Voltage V
CEO
-30 V
Emitter to Base Voltage V
EBO
-5 V
Collector Current - Continuous I
C
-0.8 A
Collector Power Dissipation P
C
625 mW
Thermal Resistance From Junction to Ambient R
θJA
200 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit Test condition
Collector to Base Breakdown Voltage V
(BR)CBO
-35 - - V I
C
= -0.5mA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
-30 - - V I
C
= -1mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
-5 - - V I
E
= -0.05mA, I
C
=0
Collector Cut-Off Current I
CBO
- - -0.1 μA V
CB
= -35V, I
E
=0
Emitter Cut-Off Current I
EBO
- - -0.1 μA V
EB
= -5V, I
C
=0
DC Current Gain h
FE
100 - 320 V
CE
= -1V, I
C
= -0.1A
Collector to Emitter Saturation Voltage V
CE(sat)
- - -0.5 V I
C
= -0.5A, I
B
= -20mA
Transition Frequency f
T
- 120 - MHz V
CE
= -5V, I
C
= -10mA
Collector Output Capacitance C
ob
- 19 - pF V
CB
= -10V, I
E
= 0, f=1MHz
TO-92
REF.
Millimete
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 -
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G1.27 TYP.
H1.10 -
J 2.42 2.66
K 0.36 0.76
A
CE
K
F
D
B
G
H
J
Emitte
Collector
Base