Elektronische Bauelemente
2SA1980
-150 mA, -50 V
PNP Plastic Encapsulated Transistor
14-Jan-2011 Rev. B Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Base
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low collector saturation voltage: V
CE(sat)
=-0.3V(Max.)
Low output capacitance : C
ob
=4pF (Typ.)
Complements of the 2SC5343
CLASSIFICATION OF h
FE
Product-Rank
2SA1980-O
2SA1980-Y
2SA1980-G
2SA1980-L
Range
70~140 120~240 200~400 300~700
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
-50 V
Collector to Emitter Voltage V
CEO
-50 V
Emitter to Base Voltage V
EBO
-5 V
Collector Current - Continuous I
C
-150 mA
Collector Power Dissipation P
C
625 mW
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage V
(BR)CBO
-50 - - V I
C
=-100µA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
-50 - - V I
C
=-10mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
-5 - - V I
E
=-10µA, I
C
=0
Collector Cut-Off Current I
CBO
- - -0.1 µA V
CB
=-50 V, I
E
=0
Collector Cut-Off Current I
CEO
- - -0.1 µA V
EB
=-5 V, I
C
=0
DC Current Gain h
FE
70 - 700 V
CE
=-6V, I
C
=-2mA
Collector to Emitter Saturation Voltage V
CE(sat)
- - -0.30
V I
C
=-100mA, I
B
=-10mA
Transition Frequency f
T
80 - - MHz V
CE
=-10V, I
C
=-1mA
Collector Output Capacitance C
ob
- 4 7 pF V
CB
=-10V, I
E
=0, f=1MHz
Noise Figure NF - - 10 dB
V
CE
=-6V, I
C
=-0.1mA, f=1KHz,
R
S
=10KΩ
TO-92
REF.
2
22
2 Collector
3
33
3 Base