2SA1875 / 2SC4976
No.5507-1/5
Features
•
High f
T
: f
T
=400MHz(typ).
•
High breakdown voltage : V
CEO
≥200V(min).
•
Large current capacitance.
• Small reverse transfer capacitance and excellent high
-frequency characteristic :
Cre=3.4pF(NPN), 4.2pF(PNP).
• Adoption of FBET process.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN5507B
2SA1875 / 2SC4976
High-Definition CRT Display
Video Output Applications
52101 TS IM TA-9766
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP / NPN Epitaxial Planar Silicon Transistors
Package Dimensions
unit : mm
2045B
unit : mm
2044B
[2SA1875 / 2SC4976]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
2.3 2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
6.5
2.3
0.5
1.55.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3 2.3
0.6
12
4
3
[2SA1875 / 2SC4976]
