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1998©
Document No. D15593EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1847
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SA1847 is a power transistor developed for high-speed switching and features a high h
FE
at low V
CE(sat)
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Auto-mount possible in radial taping specifications
• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
• High h
FE
and low V
CE(sat)
:
V
CE(sat)
= −0.3 V MAX. @I
C
= −6.0 V, I
B
= −0.3 A
h
FE
≥ 100 @V
CE
= −2.0 V, I
C
= −2.0 A
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
−150
V
Collector to emitter voltage V
CEO
−100
V
Emitter to base voltage V
EBO
−7.0
V
Collector current (DC) I
C(DC)
−10
A
Collector current (pulse) I
C(pulse)
PW ≤ 300
µ
s, duty cycle ≤ 2% −20
A
Base current (DC) I
B(DC)
−6.0
A
Total power dissipation P
T
Ta = 25°C
1.8 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
