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2SA1845

2SA1845首页预览图
型号: 2SA1845
PDF文件:
  • 2SA1845 PDF文件
  • 2SA1845 PDF在线浏览
功能描述: PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF文件大小: 139.25 Kbytes
PDF页数: 共6页
制造商: NEC[NEC]
制造商LOGO: NEC[NEC] LOGO
制造商网址: http://www.nec.com/
捡单宝2SA1845
供应商
型号
品牌
封装
批号
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  • 深圳市恒佳微电子有限公司

    8

    0855-82710336,8253315618926541169朱经理,张小姐0755-83211610华强北路上步工业区501栋11楼1109室11011932

  • 2SA1845
  •  
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  • 23+ 
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  • 现代芯城(深圳)科技有限公司

    8

    0755-8254257919924492152董先生深圳市福田区振中路华强广场B座28F11011909

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  • 深圳市坤融电子有限公司

    16

    0755-2399097517318082080,13510287235肖瑶,树平航都大厦11FG11012384

  • 2SA1845
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PDF页面索引
120%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998©
Document No. D15592EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1845
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SA1845 is a power transistor developed for high-speed switching and features a high h
FE
at low V
CE(sat)
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
Auto-mounting possible in radial taping specifications
Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
High h
FE
and low V
CE(sat)
:
V
CE(sat)
0.3 V @I
C
= 3.0 A, I
B
= 0.15 A
h
FE
100 @V
CE
= 2.0 V, I
C
= 1.0 A
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
150
V
Collector to emitter voltage V
CEO
100
V
Emitter to base voltage V
EBO
7.0
V
Collector current (DC) I
C(DC)
5.0
A
Collector current (pulse) I
C(pulse)
PW 300
µ
s, duty cycle 2% 10
A
Base current (DC) I
B(DC)
2.5
A
Total power dissipation P
T
Ta = 25°C
1.8 W
Junction temperature T
j
150
°C
Storage temperature T
stg
55 to +150 °C
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