2SA1832
-0.15A , -50V
PNP Silicon Plastic Encapsulated Transistor
Elektronische Bauelemente
25-Jan-2011 Rev. A Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Base
Emitte
Collector
FEATURES
High Voltage and High Current
Excellent h
FE
Linearity
Complementary to 2SC4738
CLASSIFICATION OF h
FE
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
-50 V
Collector to Emitter Voltage V
CEO
-50 V
Emitter to Base Voltage V
EBO
-5 V
Collector Current - Continuous I
C
-150 mA
Collector Power Dissipation P
C
100 mW
Thermal Resistance Junction to Ambient R
θJA
125 °C / W
Junction and Storage Temperature T
J
, T
STG
-55~125 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V
BR
CBO
-50 - - V I
C
= -100A, I
E
=0
Collecto
to Emitter Breakdown
V
(BR)CEO
-50 - - V I
C
= -1mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
-5 - - V I
E
= -100A, I
C
=0
Collector Cut - off Current I
CBO
- - -100 nA V
CB
= -50V, I
E
=0
Emitter Cut - off Current I
EBO
- - -100 nA V
EB
= -5V, I
C
=0
DC Current Gain h
FE
120 - 400 V
CE
= -6V, I
C
= -2mA
Collector to Emitter
Saturation Voltage
V
CE(sat)
- - -0.3 V I
C
= -100mA, I
B
= -10mA
Transition Frequency f
T
80 - - MHz V
CE
= -10V, I
C
= -1mA
Collector Output Capacitance C
ob
- 4 7 pF V
CB
= -10V, I
E
=0, f=1MHz
Product-Rank
2SA1832-Y 2SA1832-GR
Range
120~240 200~400
Marking SY SG
Package MPQ LeaderSize
SOT-523 3K 7’ inch
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-523
REF.
Millimete
REF.
Millimete
Min. Max. Min. Max.
A 1.5 1.7 G - 0.1
B 1.45 1.75 H 0.55 REF.
C 0.75 0.85 J 0.1 0.2
D 0.7 0.9 K -
E 0.9 1.1 L 0.5 TYP.
F 0.15 0.25 M 0.25 0.325
Top View
A
L
M
C B
D
G
H J
F
K
E
1
2
3
1
2
3