Elektronische Bauelemente
2SA1797
PNP
General Purpose Transistor
01-June-2005 Rev. B Page 1 of 2
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1
2
3
1. Base
2. Collector
3. Emitter
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High transition frequency
High power dissipation
PACKAGE DIMENSIONS
MARKING : AGX
X = hFE Rank Code
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter Symbol Ratings
Unit
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-50 V
Emitter-Base Voltage V
EBO
-6 V
Collector Current -Continuous I
C
-2 A
Collector Dissipation P
C
0.5 W
Junction & Storage temperature T
J
, T
STG
150, -55~150 °C
*These ratings are limiting values above which the serviceability of a n y semiconductor device may be impaired.
PNP ELEC TRICAL CHARACTERISTICS at Ta = 25°C
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-50 - V I
C
=-50μA, I
E
=0
Collector-emitter breakdown voltage V
(BR)CEO
-50 - V I
C
= -1mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-6 - V I
E
=-50μA, I
C
=0
Collector cut-off current I
CBO
-
-0.1 μA V
CB
=-50V, I
E
=0
Emitter cut-off current I
EBO
- -0.1 μA V
EB
=-5 V, I
C
=0
DC current gain h
FE
82 270 V
CE
=-2V, I
C
= -500mA
Collector-emitter saturation voltage V
CE(sat)
- -0.35 V I
C
=-1A, I
B
= -50mA
Typical T ransition frequency f
T
- 200 - MHz V
CE
=-2V, I
C
=-500mA, f = 100MHz
Output Capacita nce C
OB
36 pF V
CB
=-10V, I
E
=0, f=1MHz
CLASSIFICATION OF hFE2
Rank P Q
Range 82 - 180 120 - 270
Millimete
Millimete
REF.
Min. Max.
REF.
Min. Max.
A 4.40 4.60 G 3.00 REF.
B 4.05 4.25 H 1.50 REF.
C 1.50 1.70 I 0.40 0.52
D 1.30 1.50 J 1.40 1.60
E 2.40 2.60 K 0.35 0.41
F 0.89 1.20 L 5° TYP.
M0.70 REF.
SOT-89
G
L
J
K
H
I
A
MEF
B
C
D