Elektronische Bauelemente
2SA1797
PNP
General Purpose Transistor
29-Oct-2009 Rev. C Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
1
2
3
1. Base
2. Collector
3. Emitter
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High transition frequency
High power dissipation
PACKAGE DIMENSIONS
MARKING : AGX
X = hFE Rank Code
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter Symbol Ratings
Unit
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-50 V
Emitter-Base Voltage V
EBO
-6 V
Collector Current -Continuous I
C
-2 A
Collector Dissipation P
C
0.5 W
Junction & Storage temperature T
J
, T
STG
150, -55~150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-50 - V I
C
=-50µA, I
E
=0
Collector-emitter breakdown voltage V
(BR)CEO
-50 - V I
C
= -1mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-6 - V I
E
=-50µA, I
C
=0
Collector cut-off current I
CBO
-
-0.1 µA V
CB
=-50V, I
E
=0
Emitter cut-off current I
EBO
- -0.1 µA V
EB
=-5 V, I
C
=0
DC current gain h
FE
82 270 V
CE
=-2V, I
C
= -500mA
Collector-emitter saturation voltage V
CE(sat)
- -0.35
V I
C
=-1A, I
B
= -50mA
Typical Transition frequency f
T
- 200 - MHz V
CE
=-2V, I
C
=-500mA, f = 100MHz
Output Capacitance C
OB
36 pF V
CB
=-10V, I
E
=0, f=1MHz
CLASSIFICATION OF hFE2
Rank P Q
Range 82 - 180 120 - 270
REF.
REF.
D 2.30 2.60 K 0.32 0.52
E 1.50 1.70 L 0.35 0.44
F 0.89 1.20
SOT-89
