Elektronische Bauelemente
2SA1774
-0.15A, -60V
PNP Silicon General Purpose Transistor
31-Dec-2010 Rev. B Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low C
OB
. C
OB
=4.0pF
Complements the 2SC4617
CLASSIFICATION OF h
FE
Product-Rank
2SA1774-Q
2SA1774-R
2SA1774-S
Range
120~270 180~390 270~560
Marking
FQ FR FS
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-523 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
-60 V
Collector to Emitter Voltage V
CEO
-50 V
Emitter to Base Voltage V
EBO
-6 V
Collector Currrent I
C
-150
mA
Collector Power Dissipation P
C
150 mW
Junction & Storage Temperature T
J
, T
STG
150, -55 ~ 150 ℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-60 - - V I
C
=-50μA, I
E
=0
Collector-emitter breakdown voltage
V
(BR)CEO
-50 - - V I
C
=-1μA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-6 - - V I
E
=-50μA, I
C
=0
Collector cut-off current I
CBO
- - -0.1 μA V
CB
=-60V, I
E
=0
Emitter cut-off current I
EBO
- - -0.1 μA V
EB
= -6V, I
C
=0
Collector-emitter saturation voltage *
V
CE(sat)
- - -0.5 V I
C
=-50mA, I
B
=-5mA
Base-emitter saturation voltage * V
BE(sat)
- - -1.2 V I
C
=-50mA, I
B
=-5mA
DC current gain h
FE
120 - 560 V
CE
=-3V, I
C
=-1mA
Transition frequency f
T
- 140 - MHz V
CE
=-12V, I
E
=-2mA, f=30MHz
Collector output capacitance C
ob
- 3.5 5.0 pF V
CB
=-12V, I
E
=0, f=1MHz
* Pulse Test :Pulse Width ≤300us,D.C ≤ 2%
SOT-523
Top View
A
L
M
C B
D
G
H J
F
K
E
1
2
3
1
2
3
REF.
REF.
A 1.5 1.7 G - 0.1
B 1.45 1.75 H 0.55 REF.
C 0.75 0.85 J 0.1 0.2
D 0.7 0.9 K -
E 0.9 1.1 L 0.5 TYP.
F 0.15 0.25 M 0.25 0.325
