Any changing of specification will not be informed individual
2SA1774
PNP Silicon
General Purpose Transistor
FEATURES
Expitaxial planar type
PNP Silicon Teansistor
STRUCTURE
Low Cob.
Cob=4.0pF
Compements the 2SC4617
Dim Min Max
A 1.50 1.70
B 0.78 0.82
C 0.80 0.82
D 0.28 0.32
G 0.90 1.10
H 0.00 0.10
J 0.10 0.20
K 0.35 0.41
L 0.49 0.51
S 1.50 1.70
All Dimension in mm
SOT-523
S
G
D
B
L
A
1
3
2
Top View
H
C
J
K
2
1
3
http://www.SeCoSGmbH.com
Elektronische Bauelemente
Emitter
Base
Collector
!
!!
!Absolute maximum (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
-60 V
V
V
A
W
°C
°
C
-50
-6
-0.15I
C
0.15
150
−55~+150
Symbol Limits Unit
h
FE
values are classified as follows :
Item Q R S
h
FE
120~270 180~390 270~560
!
!!
!Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
-60
-50
-
7
−
−
120
−
−
−
−
−
−
−
−
−
−
1
40
4.0
−
−
−
-0.1
-0.1
560
-0.5
−
5.0
VI
C
=-50µA
I
C
=-1uA
I
E
=-50µA
V
CB
=-60V
V
EB
=-6V
V
CE
=-6V, I
C
=-1mA
I
C
/I
B
=-50mA/-5mA
V
CE
=-12V, I
E
=−2mA, f=30MHz
V
CE
=-12V, I
E
=0A, f=1MHz
V
V
µA
µA
−
V
MHz
pF
Typ. Max. Unit Conditions
Transition frequency
Marking FQ FR FS
RoHS Compliant Product
01-Jun-2002 Rev. A
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