Document No. D16126EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1743
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
2002
The 2SA1743 is a power transistor developed for high-speed
switching and features a high h
FE
at low V
CE(sat)
. This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High h
FE
and low V
CE(sat)
:
h
FE
≥ 100 (V
CE
= −2 V, I
C
= −2 A)
V
CE(sat)
≤ 0.3 V (I
C
= −6 A, I
B
= −0.3 A)
• Full-mold package that does not require an insulating board or
bushing
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
−100
V
Collector to emitter voltage V
CEO
−60
V
Emitter to base voltage V
EBO
−7.0
V
Collector current (DC) I
C(DC)
−10
A
Collector current (pulse) I
C(pulse)
*
−20
A
Base current (DC) I
B(DC)
−5.0
A
Total power dissipation
P
T
(Tc = 25°C)
30 W
Total power dissipation
P
T
(Ta = 25°C)
2.0 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
*PW ≤ 300
µ
s, duty cycle ≤ 10%
