Document No. D14858EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1742
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
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confirm that this is the latest version.
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©
2002
The 2SA1742 is a power transistor developed for high-speed
switching and features a high h
FE
at low V
CE(sat)
. This transistor is ideal
for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
• High h
FE
and low V
CE(sat)
:
h
FE
≥ 100 MIN. @V
CE
= −2.0 V, I
C
= −1.5 A
V
CE(sat)
≥ −0.3 V MAX. @I
C
= −4.0 V, I
B
= −0.2 A
• Full-mold package that does not require an insulating board or
bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
−100
V
Collector to emitter voltage V
CEO
−60
V
Emitter to base voltage V
EBO
−7.0
V
Collector current (DC) I
C(DC)
−7.0
A
Collector current (pulse) I
C(pulse)
PW ≤ 300
µ
s,
duty cycle ≤ 10%
−14
A
Base current (DC) I
B(DC)
−3.5
A
T
C
= 25°C
30 W
Total power dissipation P
T
T
A
= 25°C
2.0 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
ORDERING INFORMATION
Part No. Package
2SA1742 Isolated TO-220
(Isolated TO-220)