Document No. D16125EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1741
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
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©
2002
The 2SA1741 is a power transistor developed for high-speed
switching and features a high h
FE
at low V
CE(sat)
. This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High h
FE
and low V
CE(sat)
:
h
FE
≥ 100 (V
CE
= −2 V, I
C
= −1 A)
V
CE(sat)
≤ 0.3 V (I
C
= −3 A, I
B
= −0.15 A)
• Full-mold package that does not require an insulating board or
bushing when mounting.
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
−100
V
Collector to emitter voltage V
CEO
−60
V
Emitter to base voltage V
EBO
−7.0
V
Collector current (DC) I
C(DC)
−5.0
A
Collector current (pulse) I
C(pulse)
*
−10
A
Base current (DC) I
B(DC)
−2.5
A
Total power dissipation
P
T
(Tc = 25°C)
25 W
Total power dissipation
P
T
(Ta = 25°C)
2.0 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
*PW ≤ 300
µ
s, duty cycle ≤ 50%