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2SA1714K

2SA1714K首页预览图
型号: 2SA1714K
PDF文件:
  • 2SA1714K PDF文件
  • 2SA1714K PDF在线浏览
功能描述: PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
PDF文件大小: 141.44 Kbytes
PDF页数: 共6页
制造商: NEC[NEC]
制造商LOGO: NEC[NEC] LOGO
制造商网址: http://www.nec.com/
捡单宝2SA1714K
PDF页面索引
120%
Document No. D16124EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SA1714
PNP SILICON EPITAXIAL POWER TRANSISTOR
(DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
2002
The 2SA1714 is a high-speed darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse mortors or blushless mortor of OA and FA equipment.
FEATURES
High DC current amplifiers due to darlington connection
Large current capacitance and low V
CE(sat)
TO-126 power transistor with high power dissipation
Complementary transistor with 2SC4342
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
100
V
Collector to emitter voltage V
CEO
100
V
Emitter to base voltage V
EBO
8.0
V
Collector current (DC) I
C(DC)
+
3.0
A
Collector current (pulse) I
C(pulse)
*
+
6.0
A
Base current (DC) I
B(DC)
0.3
A
Total power dissipation
P
T
(Ta = 25°C)
1.3 W
Total power dissipation
P
T
(Tc = 25°C)
12 W
Junction temperature T
j
150
°C
Storage temperature T
stg
55 to +150 °C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Emitter
2. Collector
3. Base
4. Fin
(
collector
)
*PW 10 ms, duty cycle 50%
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