2SA1708 / 2SC4488
No.3094-1/5
Features
•
Adoption of FBET, MBIT processes.
• High breakdown voltage, large current capacity.
• Fast switching speed.
Specifications ( ) : 2SA1708
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(--)120 V
Collector-to-Emitter Voltage V
CEO
(--)100 V
Emitter-to-Base Voltage V
EBO
(--)6 V
Collector Current I
C
(--)1 A
Collector Current (Pulse) I
CP
(--)2 A
Collector Dissipation P
C
1W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=(--)100V, I
E
=0A (--)100 nA
Emitter Cutoff Current I
EBO
V
EB
=(--)4V, I
C
=0A (--)100 nA
DC Current Gain h
FE
V
CE
=(--)5V, I
C
=(--)100mA 100* 400*
Gain-Bandwidth Product f
T
V
CE
=(--)10V, I
C
=(--)100mA 120 MHz
Output Capacitance Cob V
CB
=(--)10V, f=1MHz (13)8.5 pF
Continued on next page.
* : The 2SA1708 / 2SC4488 are classified by 100mA h
FE
as follws:
Rank R S T
h
FE
100 to 200 140 to 280 200 to 400
www.semiconductor-sanyo.com/network
Ordering number : EN3094A
22509EA MS IM TC-00001859 / 93003TN (KT)/83098HA(KT)/4249MO, TS
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customer
'
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'
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SANYO Semiconductors
DATA SHEET
2SA1708 / 2SC4488
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
