Elektronische Bauelemente
2SA1664
-0.8 A, -35V
PNP Plastic Encapsulated Transistor
26-Sep-2014 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low collector-emitter saturation voltage V
CE(sat)
For low-frequency output amplification
High Transition Frequency
CLASSIFICATION OF h
FE1
Product 2SA1664-O 2SA1664-Y
Range 100~200 160~320
Marking RO RY
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-89 1K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings
Unit
Collector-Base Voltage V
CBO
-35 V
Collector-Emitter Voltage V
CEO
-30 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current -Continuous I
C
-0.8 A
Collector Power Dissipation P
C
500 mW
Thermal Resistance From Junction To Ambient R
θJA
250 °C/W
Junction & Storage Temperature T
J
, T
STG
150, -55~150 °C
PNP ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max. Unit
Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-35 - - V I
C
= -1mA, I
E
=0
Collector-emitter breakdown voltage
V
(BR)CEO
-30 - - V I
C
= -10mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-5 - - V I
E
= -1mA, I
C
=0
Collector cut-off current I
CBO
-
- -100 nA V
CB
= -35V, I
E
=0
Emitter cut-off current I
EBO
- - -100 nA V
EB
= -5 V, I
C
=0
h
FE1
100 - 320 V
CE
= -1V, I
C
= -100mA
DC current gain
h
FE2
35 - -
V
CE
= -1V, I
C
= -700mA
Collector-emitter saturation voltage V
CE(sat)
- - -0.7 V I
C
= -0.5A, I
B
= -20mA
Base-emitter voltage V
BE
-0.5 - -0.8 V V
CE
= -1V, I
C
= -10mA
Transition frequency f
T
- 120 - MHz
V
CE
= -5V, I
C
= -10mA,
Output Capacitance C
OB
- 19 - pF V
CB
= -10V, I
E
=0, f=1MHz
REF.
REF.
D 2.30 2.60 K 0.32 0.52
E 1.50 1.70 L 0.35 0.44
F 0.89 1.20
SOT-89
