Document No. D15588EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1649, 2SA1649-Z
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
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confirm that this is the latest version.
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©
2002
The 2SA1649 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
V
CE(sat)
= −0.3 V MAX. (@I
C
= −3 A)
• Fast switching speed:
t
f
= 0.3
µ
s MAX. (@I
C
= −3 A)
• High DC current amplifiers and excellent linearity
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
−40
V
Collector to emitter voltage V
CEO
−30
V
Emitter to base voltage V
EBO
−7.0
V
Collector current (DC) I
C(DC)
−10
A
Collector current (pulse) I
C(pulse)
*
−20
A
Base current (DC) I
B(DC)
−3.5
A
Total power dissipation
P
T
(Tc = 25 °C)
15 W
Total power dissipation
P
T
(Ta = 25 °C)
1.0**, 2.0*** W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
PACKAGE DRAWING (UNIT: mm)
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*: PW ≤ 300
µ
s, duty cycle ≤ 10%
**: Printing board mounted
***: 7.5 mm
2
× 0.7 mm ceramic board mounted