Document No. D15587EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1645, 2SA1645-Z
PNP SILICON EPITAXIAL
TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
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confirm that this is the latest version.
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availability and additional information.
©
2002
The 2SA1645 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage. This transistor is ideal for use in switching
power supplies, DC/DC converters, motor drivers, solenoid drivers,
and other low-voltage power supply devices, as well as for high-
current switching.
FEATURES
• Fast switching speed
• Low collector-to-emitter saturation voltage:
V
CE(sat)
= −0.3 V MAX. @I
C
= −4 A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
−150
V
Collector to emitter
voltage
V
CEO
−100
V
Emitter to base voltage V
EBO
−7.0
V
Collector current I
D(DC)
−7.0
A
Collector current I
C(pulse)
PW ≤ 300
µ
s,
Duty Cycle ≤
10%
−14
A
Base current I
B(DC)
−3.5
A
Total power dissipation P
T
Tc = 25 °C
35 W
Total power dissipation P
T
Ta = 25 °C
1.5 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to
+150
°C
PACKAGE DRAWING (UNIT: mm)
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