Any changing of specification will not be informed individual
2SA1577
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
COLLECTOR
3
1
BASE
2
EMITTER
K
J
C
H
L
A
B
S
GV
3
1
2
1
2
3
http://www.SeCoSGmbH.com
Elektronische Bauelemente
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
SOT-323
FEAT
URES
Power dissipation
P
CM : 200 mW
Temp.=25
Collector current
I
CM : -500 mA
Collector-base voltage
V
(BR)CBO : -40 V
Operating and storage junction temperature range
T
J
T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICS
Tamb=25 C unless otherwise specified
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
-100 µ
A,I
E
=0
-40
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
-1
mA,I
B
=0
-32
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-100µA,I
C
=0 -5
V
Collector cut-off current
I
CBO
V
CB
=
-20
V,I
E
=0
-1
µA
µA
Emitter cut-off current
I
EBO
V
EB
=-4V,I
C
=0 -1
DC current gain
h
FE(1)
V
CE
=
-3
V,I
C
=
-10
mA
8 2 3 90
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-100 mA,I
B
=-10mA -0.4
V
Transition frequency
f
T
V
CE
=
-5
V,I
C
=
-20
mA,f=100MHz
2 00
MHz
Collector output capacitan ce
C
ob
V
CB
=
-10
V,I
E
=0,f=
1
MHz
7
pF
CLASSIFICATION OF h
FE(1)
Rank P Q R
Range 82-180 120-270 180-390
Marking HP HQ HR
D
Top View
01-Jun-2002 Rev. A
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