Any changing of specification will not be informed individual
2SA1576F
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
· Complements the 2SC4081F
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
SOT-323
K
J
C
H
L
A
B
S
GV
3
1
2
D
Top View
1
2
3
http://www.SeCoSGmbH.com
Elektronische Bauelemente
01-Jun-2002 Rev. A
Page 1 of 3
AbsoluteMaximumRatingsatTa=25к
Parameter Symbol Ratings Unit
JunctionTemperatureTj+150
ć
Storage Temperature Tstg -55~+150
ć
CollectortoBaseVoltageVCBO-60V
CollectortoEmitterVoltageVCEO-50V
EmittertoBaseVoltageVEBO-6V
CollectorCurrentIC-150mA
TotalPowerDissipationPD225mW
Characteristics atTa=25к
Parameter Symbol
Min
Typ.
Max
Unit Test Conditions
Collector -Base Breakdown Voltage BVCBO
-60 - - V IC=-50uA
Collector -Emitter Breakdown Voltage BVCEO
-50 - - V IC=-1mA
Emitter -Base Breakdown Voltage BVEBO
-6 - - V IE=-50uA
Collector -Emitter Breakdown Voltage ICBO - -
-100 nA VCB =-60V
Emitter -Base Cutoff Current IEBO - -
-100 nA VEB=-6V
Collector Saturation Voltage 1 VCE(sat) - -
-500 mV IC=-50mA, IB=-5mA
DC Current Gain hFE 120
- 560 - VCE =-6V, IC=-1mA
Gain-Bandwidth Product fT - 140
- MHz VCE =-12V, IE=-2 mA, f=100MHz
Output Capacitance Cob -
4.0
5.0 pF VCB =-12V, f=1MHz , IE=0
Range 120 - 270 180 - 390 270 - 560
*Pulse Test: Pulse Width = 380us, Duty Cycle = 2%
Classification of hFE
Rank Q R S
Feature
Marking Code: 5AX
X = hFE Rank Code
