Any changing of specification will not be informed individual
2SA1576A
PNP Silicon
Epitaxial Planar Transistor
RoHS Compliant Product
*Complements the 2SC4081
Feature
The 2SA1576A is designed for use
in
driver stage of AF amplifier and
general purpose amplificaion.
Description
http://www.SeCoSGmbH.com
Elektronische Bauelemente
01-Jun-2002 Rev. A
Page 1 of 3
AbsoluteMaximumRatingsatTa=25 C
Parameter Symbol Ratings Unit
Junction Temperature Tj,
Storage
Tstg
-55~+150
CollectortoBaseVoltage VCBO -60 V
CollectortoEmitterVoltageVCEO -50 V
EmittertoBaseVoltage VEBO V
CollectorCurrent IC -150 mA
Total Power Dissipation PD
225
mW
Characteristics atTa=2
Parameter Symbol
Mi n
Typ.
Max
Unit Test Cond itio ns
Collector-Base Breakdown Voltage BVCBO -60 - - V IC=-50uA
Collector-Emitter Breakdown Voltage BVCEO -50 - - V IC=-1mA
Emitter-Base Breakdown Voltage BVEBO -6 - - V IE=-50uA
Collector-Emitter Breakdown Voltage ICBO - - -100 nA VCB=-60V
Emitter-Base Cutoff Current IEBO - - -100 nA VEB=-6V
Collector Saturation Voltage VCE(sat) - - -500 mV IC=-5 0mA, I B=-5 mA
DC Current Gain hFE 120
- 560 - VCE=-6V, IC=-1m
A
Gain-Bandwidth Product fT - 140
- MHz VCE=-12V, IC=-2mA, f=100MHz
Output Capacitance Cob - 4 5 pF VCB=-12V, f=1MHz, IE=0
Range 120 - 270 180 - 390 270 - 560
Classification of hFE
Rank 5AQ 5AR 5AS
and
C
o
5 C
o
o
-6
Millimeter Millimeter
REF.
Min.
Max.
REF.
Min. Max.
A 0.80
1.10 L1 0.42 REF.
A1 0 0.10 L 0.15 0.35
A2 0.80
1.00 b 0.25 0.40
D 1.80
2.20 c 0.10 0.25
E 1.15
1.35 e 0.65 REF.
HE 1.80
2.40 Q1 0.15 BSC.
