Elektronische Bauelemente
2SA1576A
-0.15A, -60V
PNP Silicon Epitaxial Paner Transistors
07-Jan-2011 Rev. C Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The 2SA1576A is designed for use in driver stage of
AF amplifier and general purpose amplificaion.
FEATURES
Complements of the 2SC4081
Excellent h
FE
Linearity
CLASSIFICATION OF h
FE
Product-Rank
2SA1576A-Q 2SA1576A-R 2SA1576A-S
Range
120~270 180~390 270~560
Marking
FQ FR FS
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-323 3K 7’ inch
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector-Base Voltage V
CBO
-60 V
Collector-Emitter Voltage V
CEO
-50 V
Emitter-Base Voltage V
EBO
-6 V
Collector Current I
C
-150 mA
Collector Power Dissipation P
C
200 mW
Junction & Storage temperature T
J
, T
STG
150, -55 ~ 150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max. Unit Test Conditions
Collector-Base Breakdown Voltage V
(BR)CBO
-60 - - V I
C
=-50µA, I
E
=0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-50 - - V I
C
=-1mA, I
B
=0
Emitter-Base Breakdown Voltage V
(BR)EBO
-6 - - V I
E
=-50µA, I
C
=0
Collector Cut-Off Current I
CBO
- - 0.1 µA V
CB
=-60V, I
E
=0
Emitter Cut-off Current
I
EBO
0.1 µA V
EB
=-6V, I
C
=0
DC Current Gain h
FE
120 - 560 V
CE
=-6V, I
C
=-1mA
Collector-Emitter Saturation Voltage V
CE(sat)
- - -0.5 V I
C
=-50mA, I
B
=-5mA
Transition Frequency f
T
- 140 - MHz V
CE
=-12V, I
C
=-2mA, f=30MHz
Collector Output Capacitance C
ob
- 4 5 pF V
CB
=-12V, I
E
=0, f=1MHz
SOT-323
Millimeter Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A 1.80
2.20 G 0.100 REF.
B 1.80
2.45 H 0.525 REF.
C 1.15
1.35 J 0.08
0.25
D 0.80
1.10 K - -
E 1.20
1.40 L 0.650 TYP.
F 0.20
0.40
