2SA1419 / 2SC3649
No.2007-1/7
Features
•
Adoption of FBET, MBIT processes
•
High breakdown voltage and large current capacity
•
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
Specifi cations
( ) : 2SA1419
Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(--)180 V
Collector-to-Emitter Voltage V
CEO
(--)160 V
Emitter-to-Base Voltage V
EBO
(--)6 V
Collector Current I
C
(--)1.5 A
Collector Current (Pulse) I
CP
(--)2.5 A
Collector Dissipation P
C
500 mW
When mounted on ceramic substrate (250mm
2
×
0.8mm)
1.5 W
Junction Temperature Tj 150
°
C
Storage Temperature Tstg --55 to +150
°
C
Package Dimensions
unit : mm (typ)
7007B-004
Ordering number : EN2007C
82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/4277TA, TS
SANYO Semiconductors
DATA SHEET
http://www.sanyosemi.com/en/network/
Product & Package Information
• Package : PCP
• JEITA, JEDEC : SC-62, SOT-89, TO-243
•
Minimum Packing Quantity
: 1,000 pcs./reel
Packing Type: TD
Marking
Electrical Connection
TD
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
2.5
4.0
1.0
1.5
0.5
0.4
3.0
4.5
1.6
0.4
123
1.5
0.75
Top View
Bottom View
2SA1419S-TD-E
2SA1419S-TD-H
2SA1419T-TD-E
2SA1419T-TD-H
2SC3649S-TD-E
2SC3649S-TD-H
2SC3649T-TD-E
2SC3649T-TD-H
AE
LOT No.
CE
LOT No.
2SC36492SA1419
RANK RANK
2
3
1
2SC3649
2
3
1
2SA1419
2SA1419/2SC3649
PNP / NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching
Applications