2SA1417 / 2SC3647
No.2006-1/5
Features
• Adoption of FBET, MBIT processes.
•
High breakdown voltage and large current capacity.
• Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.
Specifications ( ) : 2SA1417
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(--)120 V
Collector-to-Emitter Voltage V
CEO
(--)100 V
Emitter-to-Base Voltage V
EBO
(--)6 V
Collector Current I
C
(--)2 A
Collector Current (Pulse) I
CP
(--)3 A
Collector Dissipation P
C
500 mW
Mounted on a ceramic board (250mm
2
✕0.8mm) 1.5 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=(--)100V, I
E
=0A (--)100 nA
Emitter Cutoff Current I
EBO
V
EB
=(--)4V, I
C
=0A (--)100 nA
DC Current Gain h
FE
V
CE
=(--)5V, I
C
=(--)100mA 100* 400*
Gain-Bandwidth Product f
T
V
CE
=(--)10V, I
C
=(--)100mA 120 MHz
Output Capacitance Cob V
CB
=(--)10V, f=1MHz (25)16 pF
Collector-to-Emitter Saturation Voltage V
CE
(sat) I
C
=(--)1A, I
B
=(--)100mA
(--0.22)0.13
(--0.6)0.4 V
Base-to-Emitterr Saturation Voltage V
BE
(sat) I
C
=(--)1A, I
B
=(--)100mA (--)0.85 (--)1.2 V
Continued on next page.
* ; The 2SA1417 / 2S3647 are classified by 100mA h
FE
as follws:
Rank R S T
h
FE
100 to 200 140 to 280 200 to 400
Marking 2SA1417: A C
2SC3647: CC
Ordering number : EN2006C
80906 / 22006EA MS IM / O3103TN (KT) / 71598HA (KT) / 3277KI / N255MW, TS
2SA1417 / 2SC3647
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching
Applications
SANYO Semiconductors
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