2SA1416 / 2SC3646
No.2005-1/7
Features
•
Adoption of FBET, MBIT processes
•
High breakdown voltage and large current capacity
•
Fast switching speed
•
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
Specifi cations
( ) : 2SA1416
Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(--)120 V
Collector-to-Emitter Voltage V
CEO
(--)100 V
Emitter-to-Base Voltage V
EBO
(--)6 V
Collector Current I
C
(--)1 A
Collector Current (Pulse) I
CP
(--)2 A
Collector Dissipation P
C
500 mW
When mounted on ceramic substrate (250mm
2
×
0.8mm)
1.3 W
Junction Temperature Tj 150
°
C
Storage Temperature Tstg --55 to +150
°
C
Package Dimensions
unit : mm (typ)
7007B-004
Ordering number : EN2005C
82212 TKIM/31010EA TKIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS
SANYO Semiconductors
DATA SHEET
http://www.sanyosemi.com/en/network/
Product & Package Information
• Package : PCP
• JEITA, JEDEC : SC-62, SOT-89, TO-243
•
Minimum Packing Quantity
: 1,000 pcs./reel
Packing Type: TD
Marking
Electrical Connection
TD
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
2.5
4.0
1.0
1.5
0.5
0.4
3.0
4.5
1.6
0.4
123
1.5
0.75
Top View
Bottom View
2SA1416S-TD-E
2SA1416T-TD-E
2SC3646S-TD-E
2SC3646T-TD-E
AB
LOT No.
CB
LOT No.
2SC36462SA1416
RANK RANK
2
3
1
2SC3646
2
3
1
2SA1416
2SA1416/2SC3646
PNP / NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching
Applications
