2SA1298
-0.8A , -35V
PNP Silicon Plastic Encapsulated Transistor
Elektronische Bauelemente
19-Jan-2011 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
Base
Emitte
Collector
FEATURES
Low Frequency Power Amplifier Application
Power Switching Applications
CLASSIFICATION OF h
FE (1)
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-23 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
-35 V
Collector to Emitter Voltage V
CEO
-30 V
Emitter to Base Voltage V
EBO
-5 V
Collector Current - Continuous I
C
-800 mA
Collector Power Dissipation P
C
200 mW
Thermal Resistance Junction to Ambient R
θJA
625 °C / W
Junction and Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V
(BR)CBO
-35 - - V I
C
= -1mA, I
E
=0
Collecto
to Emitter Breakdown
V
(BR)CEO
-30 - - V I
C
= -10mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
-5 - - V I
E
= -1mA, I
C
=0
Collector Cut-off Current I
CBO
- - -0.1 A V
CB
= -30V, I
E
=0
Emitter Cut-off Current I
EBO
- - -0.1 A V
EB
= -5V, I
C
=0
DC Current Gain
h
FE(1)
100 - 320 V
CE
= -1V, I
C
= -100mA
h
FE(2)
40 - - V
CE
= -1V, I
C
= -800mA
Collector to Emitter
Saturation Voltage
V
CE(sat)
-0.5 - -0.8 V I
C
= -500mA, I
B
= -20mA
Base to Emitter Saturation Voltage V
BE
- - -0.5 V V
CB
= -1V, I
C
= -10mA
Transition Frequency f
T
- 120 - MHz V
CE
= -5V, I
C
= -10mA
Collector Output Capacitance C
ob
- 13 - pF V
CB
= -10V, I
E
=0, f=1MHz
Product-Rank
2SA1298-O 2SA1298-Y
Range
100~200 160~320
Marking IO IY
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
REF.
Millimete
REF.
Millimete
Min. Max. Min. Max.
A 2.80 3.00 G 0.10 REF.
B 2.25 2.55 H 0.55 REF.
C 1.20 1.40 J 0.08 0.15
D 0.90 1.15 K 0.5 REF.
E 1.80 2.00 L 0.95 TYP.
F 0.30 0.50
