1998©
Document No. D16143EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SA1221, 1222
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
2002
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FEATURES
• Ideal for use of high withstanding voltage current such as TV
vertical deflection output, audio output, and variable power
supplies.
• Complementary transistor with 2SC2958 and 2SC2959
V
CEO
= 140 V: 2SA1221/2SC2958
V
CEO
= 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
−160
V
Collector to emitter voltage V
CEO
−140/–160
V
Emitter to base voltage V
EBO
−5.0
V
Collector current (DC) I
C(DC)
−500
mA
Collector current (pulse) I
C(pulse)
*
−1.0
A
Total power dissipation P
T
1.0 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
CBO
V
CB
= −100 V, I
E
= 0 −200
nA
Emitter cutoff current I
EBO
V
EB
= −5.0 V, I
C
= 0 −200
nA
DC current gain h
FE
**
V
CE
= −2.0 V, I
C
= −100 mA
100 150 400
DC base voltage V
BE
**
V
CE
= −5.0 V, I
C
= −20 mA −0.6 −0.64 −0.7
V
Collector saturation voltage V
CE(sat)
**
I
C
= −1.0 A, I
B
= −0.2 A −0.6 −0.9
V
Base saturation voltage V
BE(sat)
**
I
C
= −1.0 A, I
B
= −0.2 A −1.1 −0.3
V
Output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1.0 MHz
24 40 pF
Gain bandwidth product f
T
V
CE
= −10 V, I
E
= 20 mA
30 45 MHz
** Pulse test PW ≤ 350
µ
s, duty cycle ≤ 2% per pulsed