Any changing of specification will not be informed individual
2SA1213
PNP Silicon
Medium Power Transistor
RoHS Compliant Product
http://www.SeCoSGmbH.com
Elektronische Bauelemente
*Features
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
0.900
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
1.100
Min
0.055
0.013
0.014
0.014
0.173
0.055
0.091
0.155
0.114
0.035
Max
0.063
0.020
0.022
0.017
0.181
0.071
0.102
0.167
0.122
0.043
Dimensions In Millimeters Dimensions In Inches
0.060TYP
1.500TYP
D
D1
C
A
b
b1
E1
E
L
e
e1
SOT-89
1.BASE
2.COLLECTOR
3.EMITTER
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
(BR)CBO
Ic=-100 A I
E
=0 -50 V
Collector-emitter breakdown voltage V
(BR)CEO
I
C
= -10mA , I
B
=0 -50 V
Emitter-base breakdown voltage V
(BR)EBO
I
E
=-100 A I
C
=0 -5 V
Collector cut-off current I
CBO
V
CB
=-50 V , I
E
=0 -0.1 A
Emitter cut-off current I
EBO
V
EB
=-5 V , I
C
=0 -0.1 A
h
FE 1
V
CE
=-2V, I
C
= -0.5A 70 240
DC current gain
h
FE 2
V
CE
=-2V, I
C
=-2A
20
Collector-emitter saturation voltage V
CEsat
I
C
=-1A, I
B
= -0.05A -0.5 V
Base-emitter saturation voltage V
BEsat
I
C
=-1A, I
B
= -0.05A -1.2 V
Transition frequency
f
T
V
CE
= -2V, I
C
=-0.5A 100 MHz
CLASSIFICATION OF h
FE
Marking NO NY
Low power dissipation 0.5W
*Stucture
Epitaxial planar type.
PNP silicon transistor.
Collector Current -2A
01-Jun-2002 Rev. A
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