70502TN (KT)/71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/5
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
160V/140mA High-Voltage Switching
and AF 100W Predriver Applications
Ordering number:ENN779D
2SA1209/2SC2911
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA1209
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
2009B
[2SA1209/2SC2911]
Features
· Adoption of FBET process.
· High breakdown voltage.
· Good linearity of h
FE
and small C
ob
.
· Fast switching speed.
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
081)–(V
egatloVrettimE-ot-rotcelloCV
OEC
061)–(V
egatloVesaB-ot-rettimEV
OBE
5)–(V
tnerruCrotcelloCI
C
041)–(Am
)esluP(tnerruCrotcelloCI
PC
002)–(Am
noitapissiDrotcelloCP
C
1W
01W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
˚C
˚C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
*: The 2SA1209/2SC2911 are classified by 10mA h
FE
as follows : Continued on next page.
Tc=25˚C
knaRRST
h
EF
002ot001082ot041004ot002
8.0
4.0
7.0
11.0
1.5
15.5
3.0
1.6
0.8
0.8
0.6
0.5
2.7
4.8
2.4
1.2
123
3.0
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V08)–(=
E
0=1.0)–(Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V4)–(=
C
0=1.0)–(Aµ
niaGtnerruCCDh
EF
V
EC
I,V5)–(=
C
Am01)–(=*001*004
tcudorPhtdiwdnaB-niaGf
T
V
EC
I,V01)–(=
C
Am01)–(=051zHM
ecnaticapaCtuptuOC
bo
V
BC
zHM1=f,V01)–(=0.3)0.4(Fp