2SA1179N / 2SC2812N
No.7198-1/4
Features
• Miniature package facilitates miniaturization in end products.
• High breakdown voltage.
Specifications ( ) : 2SA1179N
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(--)55 V
Collector-to-Emitter Voltage V
CEO
(--)50 V
Emitter-to-Base Voltage V
EBO
(--)5 V
Collector Current I
C
(--)150 mA
Collector Current (Pulse) I
CP
(--)300 mA
Base Current I
B
(--)30 mA
Collector Dissipation P
C
200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=(--)35V, I
E
=0A (--)0.1 µA
Emitter Cutoff Current I
EBO
V
EB
=(--)4V, I
C
=0A (--)0.1 µA
DC Current Gain h
FE
V
CE
=(--)6V, I
C
=(--)1mA 200 400
Gain-Bandwidth Product f
T
2SC2812N : V
CE
=6V, I
C
=1mA 100 MHz
2SA1179N : V
CE
=--6V, I
C
=--10mA (180) MHz
Output Capacitance Cob V
CB
=(--)6V, f=1MHz (4.0)3.0 pF
Collector-to-Emitter Saturation Voltage V
CE
(sat) I
C
=(--)50mA, I
B
=(--)5mA
(--0.15)0.1
(--)0.5 V
Base-to-Emitter Saturation Voltage V
BE
(sat) I
C
=(--)50mA, I
B
=(--)5mA (--)1.0 V
Collector-to-Base Breakdown Voltage V
(BR)CBO
I
C
=(--)10µA, I
E
=0A (--)55 V
Collector-to-Emitter Breakdown Voltage V
(BR)CEO
I
C
=(--)1mA, R
BE
=∞ (--)50 V
Emitter-to-Base Breakdown Voltage V
(BR)EBO
I
E
=(--)10µA, I
C
=0A (--)5 V
Marking : 2SA1179N : M / 2SC2812N : L
* : The 2SA1179N / 2SC2812N are classified by 1mA h
FE
as follws:
Rank 6
h
FE
200 to 400
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN7198A
92006 MS IM TC-00000143,00000144 / 72602 TS IM TA-2636, 2637
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SA1179N / 2SC2812N
PNP / NPN Epitaxial Planar Silicon Transistors
Low-Frequency General-Purpose
Amp Applications
