Any changing of specification will not be informed individual
2SA1162
PNP Silicon
General Purpose Transistor
Collector
3
1
Base
2
Emitter
K
J
C
H
L
A
B
S
GV
3
1
2
D
Top View
1
2
3
p.),10dB (Max.)
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
SOT-23
http://www.SeCoSGmbH.com
Elektronische Bauelemente
FEATURES
n
Low noise : NF= 1dB(Ty
n
RoHS Compliant Product
n
Complementary to 2SC2712.
n
Small Package.
(MAXIMUM RATINGS* T
A=25 C
O
)
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
-50 V
V
CEO
Collector-Emitter Voltage -50 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -Continuous 150 mA
P
D
Total Device Dissipation 150 mW
T
J
, T
stg
Junction and Storage Temperature -55
~125
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=-100u A,I
E
=0 -50 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=-1mA,I
B
=0 -50 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-100 u A,I
C
=0 -5 V
Collector cut-off current
I
CBO
V
CB
=-50V,I
E
=0 -0.1 u A
Emitter cut-off current
I
EBO
V
EB
=-5V,I
C
=0 -0.1 u A
DC current gain
h
FE
V
CE
=-6V,I
C
=-2mA 70 400
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-100mA,I
B
=-10mA -0.3 V
Transition frequency
f
T
V
CE
=-10V,I
C
=-1mA 80 MHz
Collector output capacitance
C
ob
V
CB
=-10V,I
E
=0,f=1MHz 7 pF
Noise figure
NF
V
CE
=-6V,I
c
=0.1mA,
f=1KHZ,Rg=10KΩ
10 dB
CLASSIFICATION OF h
FE
Rank
O Y GR(G)
Range
70-140 120-240 200-400
Marking
SO SY SG
01-Jun-2002 Rev. A
Page 1 of 2
A suffix of "-C" specifies halogen & lead-free