Elektronische Bauelemente
2SA1162
-0.15A, -50V
PNP Silicon General Purpose Transistor
31-Dec-2010 Rev. C Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specifica tion will not be informed individually.
Base
Emitte
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low Noise: NF=1 dB(Typ.), 10 dB(Max.)
Complements of the 2SC2712
MECHANICAL DATA
Case: SOT-23, Molded Plastic
Weight: 0.008 grams(approx.)
CLASSIFICATION OF h
FE
Product-Rank
2SA1162-O 2SA1162-Y 2SA1162-GR
Range
70~140 120~240 200~400
Marking
SO SY SG
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-23 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
-50 V
Collector to Emitter Voltage V
CEO
-50 V
Emitter to Base Voltage V
EBO
-5 V
Collector Currrent I
C
-150
mA
Total Device Dissipation P
D
150 mW
Junction & Storage Temperature T
J
, T
STG
125, -55 ~ 150 ℃
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-50 - - V I
C
=-100μA, I
E
=0
Collector-emitter breakdown voltage V
(BR)CEO
-50 - - V I
C
=-1mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-5 - - V I
E
=-100μA, I
C
=0
Collector cut-off current I
CBO
- - -0.1 μA V
CB
=-50V, I
E
=0
Emitter cut-off current I
EBO
- - -0.1 μA V
EB
= -5V, I
C
=0
Collector-emitter saturation voltage V
CE(sat)
- - -0.3 V I
C
=-100mA, I
B
=-10mA
DC current gain h
FE
70 - 400 V
CE
=-6V, I
C
=-2mA
Transition frequency f
T
80 - - MHz V
CE
=-10V, I
C
=-1mA
Collector output capacitance C
ob
- - 7 pF V
CB
=-10V, I
E
=0, f=1MHz
Noise Figure NF - - 10 dB V
CB
=-6V, I
C
=0.1mA, f=1MHz, Rg=10KΩ
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
SOT-23
Millimete
Millimete
REF.
Min. Max.
REF.
Min. Max.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
