Document No. D14856EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1129
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
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©
2002
The 2SA1129 is a mold power transistor developed for mid-speed
switching, and is ideal for use as a ramp driver.
FEATURES
• Large current capacity with small package: I
C(DC)
= −7.0 A
• Low collector saturation voltage:
V
CE(sat)
= −0.3 V MAX. @I
C
= −3.0 A, IB = −0.1 A
• Complementary transistor: 2SC2654
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
−30
V
Collector to emitter voltage V
CEO
−30
V
Emitter to base voltage V
EBO
−7.0
V
Collector current (DC) I
C(DC)
−7.0
A
Collector current (pulse) I
C(pulse)
PW ≤ 300
µ
s,
duty cycle ≤ 10%
−15
A
Base current (DC) I
B(DC)
−3.5
A
T
C
= 25°C
40 W
Total power dissipation P
T
T
A
= 25°C
1.5 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
ORDERING INFORMATION
Part No. Package
2SA1129 TO-220AB
(TO-220AB)