Elektronische Bauelemente
2SA1037
-0.15A, -60V
PNP Silicon General Purpose Transistor
31-Dec-2010 Rev. C Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Excellent h
FE
linearity.
Complements of the 2SC2412
MECHANICAL DATA
Case: SOT-23, Molded Plastic
Weight: 0.008 grams(approx.)
CLASSIFICATION OF h
FE
Product-Rank
2SA1037-Q
2SA1037-R
2SA1037-S
Range
120~270 180~390 270~560
Marking
FQ FR FS
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-23 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
-60 V
Collector to Emitter Voltage V
CEO
-50 V
Emitter to Base Voltage V
EBO
-6 V
Collector Currrent I
C
-150
mA
Collector Power Dissipation P
C
200 mW
Junction & Storage Temperature T
J
, T
STG
+150, -55 ~ +150 ℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-60 - - V I
C
=-50μA, I
E
=0
Collector-emitter breakdown voltage
V
(BR)CEO
-50 - - V I
C
=-1μA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-6 - - V I
E
=-50μA, I
C
=0
Collector cut-off current I
CBO
- - -0.1 μA V
CB
=-60V, I
E
=0
Emitter cut-off current I
EBO
- - -0.1 μA V
EB
= -6V, I
C
=0
Collector-emitter saturation voltage V
CE(sat)
- - -0.5 V I
C
=-50mA, I
B
=-5mA
DC current gain h
FE
120 - 560 V
CE
=-6V,I
C
=-1mA
Transition frequency f
T
- 140 - MHz V
CE
=-12V, I
E
=-2mA, f=30MHz
Collector output capacitance C
ob
- 4.0 5.0 pF V
CB
=-12V, I
E
=0, f=1MHz
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
REF.
Min. Max.
REF.
Min. Max.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
SOT-23