Any changing of specification will not be informed individual
2SA1037AK
PNP Silicon
General Purpose Transistor
http://www.SeCoSGmbH.com
Elektronische Bauelemente
Dim Min Max
A 2.70 3.10
B 1.30 1.70
C 1.00 1.30
D 0.35 0.50
G 1.70 2.30
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 1.25 1.65
S 2.25 3.00
All Dimension in mm
SC-59
S
G
D
B
L
A
1
3
2
Top View
H
C
J
K
BASE
EMITTER
COLLECTOR
FEATURES
RoHS Compliant Product.
n
n
Excellent hFE linearity.
n
Complments the 2SC2412K.
MARKING : FP, FQ, FR
MAXIMUM RATINGS* T
A=25 C
O
unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -60 V
V
CEO
Collector-Emitter Voltage -50 V
V
EBO
Emitter-Base Voltage -6 V
I
C
Collector Current -Continuous -150 mA
P
C
Collector Dissipation 200 mW
T
J
, T
stg
Junction and Storage Temperature -55
~150
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=-50µA, I
E
=0 -60 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=-1uA,I
B
=0 -50 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-50µA, I
C
=0 -6 V
Collector cut-off current
I
CBO
V
CB
=-60V,I
E
=0 -0.1 µA
Emitter cut-off current
I
EBO
V
EB
=-6V,I
C
=0 -0.1 µA
DC current gain
h
FE
V
CE
=-6V,I
C
=-1mA 120 560
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-50mA,I
B
=-5mA -0.5 V
Transition frequency
f
T
V
CE
=-12V,I
C
=-2mA,f=30MHz 140 MHz
Collector output capacitance
C
ob
V
CB
=-12V,I
E
=0,f=1MHz 4 5 pF
CLASSIFICATION OF h
FE
Rank
P Q R
Range
120 - 270 18
0 - 390 270 - 560
01-Jun-2002 Rev. A
Page 1 of 2
A suffix of "-C" specifies halogen & lead-free