Any changing of specification will not be informed individual
2SA1036
PNP Silicon
General Purpose Transistor
Collector
3
1
Base
2
Emitter
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
SOT-23
K
J
C
H
L
A
B
S
GV
3
1
2
D
Top View
http://www.SeCoSGmbH.com
Elektronische Bauelemente
1
2
3
FEATURES
. Large IC, IC MAX.=-500mA
. Low VCE(Sat), Ideal for low-voltage operation
. Small Package.
(MAXIMUM RATINGS*
T
A=25℃ )
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
-40 V
V
CEO
Collector-Emitter Voltage -32 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -Continuous -500 mA
P
D
Total Device Dissipation 150 mW
T
J
, T
stg
Junction and Storage Temperature -55
~125
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=-100u A,I
E
=0 -40 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=-1mA,I
B
=0 -32 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-100 u A,I
C
=0 -5 V
Collector cut-off current
I
CBO
V
CB
=-20V,I
E
=0 -1 u A
Emitter cut-off current
I
EBO
V
EB
=-4V,I
C
=0 -1 u A
DC current gain
h
FE
V
CE
=-3V,I
C
=-10mA 82 390
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-100mA,I
B
=-10mA -0.4 V
Transition frequency
f
T
V
CE
=-5V,I
C
=-20mA,f=100MHz 200 MHz
Collector output capacitance
C
ob
V
CB
=-10V,I
E
=0,f=1MHz 7 pF
CLASSIFICATION OF h
FE
Rank
P Q R
Range
82-18
0 120-270 180-390
Marking
HP HQ HR
. RoHS Compliant Product
01-Jun-2002 Rev. A Page 1 of 2
A suffix of "-C" specifies halogen & lead-free