Elektronische Bauelemente
2SA1036
-0.5A, -40V
PNP Silicon General Purpose Transistor
31-Dec-2010 Rev. B Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
I
C
Max.= -500 mA
Low V
CE(sat)
. Ideal for low-voltage operation.
CLASSIFICATION OF h
FE
Product-Rank
2SA1036-P
2SA1036-Q
2SA1036-R
Range
82~180 120~270 180~390
Marking
HP HQ HR
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-23 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
-40 V
Collector to Emitter Voltage V
CEO
-32 V
Emitter to Base Voltage V
EBO
-5 V
Collector Currrent I
C
-500
mA
Total Power Dissipation P
D
150 mW
Junction & Storage Temperature T
J
, T
STG
150, -55 ~ 150 ℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-40 - - V I
C
=-100μA, I
E
=0
Collector-emitter breakdown voltage
V
(BR)CEO
-32 - - V I
C
=-1mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-5 - - V I
E
=-100μA, I
C
=0
Collector cut-off current I
CBO
- - -1 μA V
CB
=-20V, I
E
=0
Emitter cut-off current I
EBO
- - -1 μA V
EB
= -4V, I
C
=0
Collector-emitter saturation voltage V
CE(sat)
- - -0.4 V I
C
=-100mA, I
B
=-10mA
DC current gain h
FE
82 - 390 V
CE
=-3V, I
C
=-10mA
Transition frequency f
T
- 200 - MHz V
CE
=-5V, I
C
=-20mA, f=100MHz
Collector output capacitance C
OB
- 7 - pF V
CB
=-10V, I
E
=0, f=1MHz
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
REF.
Min. Max.
REF.
Min. Max.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
SOT-23