Elektronische Bauelemente
2SA1020
PNP Transistor
Plastic-Encapsulate Transistors
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
6.0±0.2
1.0±0.1
4.9
±0. 2
8.6±0.2
2.0
+0.3
–0.2
14
±0.2
3.0
±0.1
(1.50 Typ.)
0.50
+0.1
–0.1
0.45
+0.1
–0.1
132
1: Emitter
2: Collector
3: Base
TO-92 MOD
Unit: mm
FEATURE
Power Amplifier Applications
1.9
–0.1
+0.1
01-Jun-2002 Rev. A
Page 1 of 3
MAXIMUM RATINGS
Symbol Parameter Value
Collector Current
-5
900
5~+150
-50
-50
-2
IC
Tstg
TJ,
Junction and
Total Power Dissipation
V
EBO
PD
Emitter-Base Voltage
V
A
mW
Storage Temperature
-5
C
O
V
CEO
Collector-Emitter Voltage
V
V
CBO
Collector-Base Voltage
V
Units
Ta=25
C unless otherwise noted
o
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter Symbol Min
Typ.
Max
Uni
Test Conditions
Collector-Base Breakdown Voltage
V(BR)CBO - - V
I
C=-100µA,IE=0
I
C=-1mA,IB=0
I
E=-100µA,IC=0
V
CB=-50V,IE=0
I
C=-
V
CE=- V, IC=-
V
CE=- V, IC=-500mA
V
CB=-10 , f=1MHz
-50
- - V
- - V
ICBO
-
-
-1
uA
-
V
CE(sat)
-
h
FE1
fT
-
MH
C
ob
-
pF
z
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
t
-50
-5
-1.2
-0.5
V
1A,IB=-50mA
2
500 A
2
V
C
70
-
40
100
-
Base Satruation Voltage VBE(sat)
V
-
-
-
240
I
C=-
1A,I
B=-50mA
o
IEBO
Emitter-Base Cutoff Current
VBE=-5 V,IC=0-
-
-1
uA
V
(BR)CEO
V(BR)EBO
Classification of hFE1
Rank O
Y
70~140
120~240
Range
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free