Elektronische Bauelemente
2SA1015K
PNP Type
Plastic Encapsulate Transistors
ƔFEATURES
. Power Dissipation
P
CM: 0.2 W ( Ta = 25 к )
. Collector Current
I
CM: -0.15 A
. Collector-Base Voltage
V
(BR)CBO: -50 V
2.EMITTER
3.COLLECTOR
1.BASE
ƔABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25к)
TYPE NUMBER SYMBOL TEST CONDITIONS Min. Typ. Max. UNIT
Collector-Base Breakdown Voltage V
(BR)CBO
I
C
= -100 µA, I
E
= 0 A -50 - - V
Collector-Emitter Breakdown Voltage V
(BR)CEO
I
C
= -0.1 mA, I
B
= 0 A -50 - - V
Emitter-Base Breakdown Voltage V
(BR)EBO
I
E
= -10 µA, I
C
= 0 A -5 - - V
Collector Cut-Off Current I
CBO
V
CB
= -50 V, I
E
= 0 A - - -0.1 µA
Collector Cut-Off Current I
CEO
V
CE
= -50 V, I
B
= 0 A - - -0.1 µA
Emitter Cut-Off Current I
EBO
V
EB
= -5 V, I
C
= 0 A - - -0.1 µA
DC Current Gain h
FE
V
CE
= -6 V, I
C
= -2 mA 130 - 400
Collector-Emitter Saturation Voltage V
CE (sat)
I
C
= -100 mA, I
B
= -10 mA - - -0.3 V
Base-Emitter Saturation Voltage V
BE(sat)
I
C
= -100 mA, I
B
= -10 mA - - -1.1 V
V
CE
= 10 V, I
C
= 1 mA,
Transition Frequency f
T
f = 30 MHz
80 - - MHz
Operating and Storage Junction
Temperature Range
T
J
, T
STG
- - 55 ~ +150
к
Ɣh
FE
VA LU ES A RE CLASSIFIED AS FOLLOWS:
Rank L H
h
FE
130 ~ 200 200 ~ 400
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
Marking: BA
K
J
C
H
L
A
B
S
GV
3
1
2
D
Top View
1
2
3
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
SOT-23
01-Jun-2002 Rev. A
Page 1 of 2
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
