Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1010
PNP SILICON EPITAXIAL
TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
DATA SHEET
©
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA1010 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
−100
V
Collector to emitter voltage V
CEO
−100
V
Emitter to base voltage V
EBO
−7.0
V
Collector current (DC) I
C(DC)
−7.0
A
Collector current (pulse) I
C(pulse)
*
−15
A
Base current (DC) I
B(DC)
−3.5
A
Total power dissipation
P
T
(Tc = 25 °C)
40 W
Total power dissipation
P
T
(Ta = 25 °C)
1.5 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
*PW ≤ 300
µ
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
Pin Connection
