Document No. D14866EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1008
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
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confirm that this is the latest version.
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©
2002
The 2SA1008 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2331
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
−100
V
Collector to emitter voltage V
CEO
−100
V
Emitter to base voltage V
EBO
−7.0
V
Collector current (DC) I
C(DC)
−2.0
A
Collector current (pulse) I
C(pulse)
PW ≤ 300
µ
s,
duty cycle ≤ 10%
−4.0
A
Base current (DC) I
B(DC)
−1.0
A
T
C
= 25°C
15 W
Total power dissipation P
T
T
A
= 25°C
1.5 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
ORDERING INFORMATION
Part No. Package
2SA1008 TO-220AB
(TO-220AB)
