1998©
Document No. D13535EJ2V0DS00 (2nf edition)
Date Published April 2002 N CP(K)
Printed in Japan
THYRISTORS
2S2M, 2S4M
2 A HIGH-SPEED SWITCHING SCR
DATA SHEET
2002
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2S2M and 2S4M are P-gate fully diffused mold SCRs
with an average on-current of 2 A. The repeat peak off-voltages
(and reverse voltages) are 200 V and 400 V.
FEATURES
• This transistor is designed for high-speed switching and is
deal for use in commercial frequencies, high-frequency pulse
applications, and inverter applications.
• This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
• Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Consumer electronic euipments, ignitors of devices for light
indutry, inverter, and solenoid valve drives
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol 2S2M 2S4M Ratings Unit
Non-repetitive peak reverse voltage V
RSM
300 500 V
R
GK
= 1 k
Ω
Non-repetitive peak off-state voltage V
DSM
300 500 V
R
GK
= 1 k
Ω
Repetitive peak reverse voltage V
RRM
200 400 V
R
GK
= 1 k
Ω
Repetitive peak off-voltage V
DRM
200 400 V
R
GK
= 1 k
Ω
Average on-state current I
T(AV)
2 (Tc = 77°C, Single half-wave,
θ
= 180°)A
Refer to Figure 6 snd 7.
Surge on-state current I
TSM
20 (f = 50 Hz, Sine half-wave, 1 cycle) A
Refer to Figure 2.
High-frequency peak on-state current I
TRM
15 (Tc = 65°C, f = 10 kp.p.s, t
p
= 10
µ
s) A −
Fusing current
∫
i
t
2
dt 1.6 (1 ms≤t≤10 ms) A
2
s −
Critical rate of rise of on-state current dI
T
/dt 50 A/
µ
s −
Peak gate power dissipation P
GM
0.5 (f≥50 Hz, Duty≤10%) W −
Average gate power dissipation P
G(AV)
0.1 W
Peak gate forward current I
FGM
0.2 (f≥50 Hz, Duty≤10%) A −
Peak gate reverse voltage V
RGM
6V−
Junction temperature T
j
−40 to +125 °C −
Storage temperature T
stg
−55 tp +150 °C −
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark