2N720A
EPITAXIAL PLANAR NPN
■ HIGH VOLTAGE GENERAL PURPOSE
DESCRIPTION
The 2N790A is a silicon Planar Epitaxial NPN
transistor in Jedec TO-18 metal case. It is
suitable for a wide variety of amplifier and
switching applications .
®
INTERNAL SCHEMATIC DIAG RAM
December 2002
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
= 0) 120 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 7 V
I
C
Collector Current 500 mA
P
tot
Total Dissipation at T
amb
≤ 25
o
C
at T
C
≤ 25
o
C
0.5
1.8
W
W
T
stg
Storage Temperature -55 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
TO-18
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