Any changing of specification will not be informed individual
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Elektronische Bauelemente
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DSS
60 Vdc
Drain–Gate Voltage (R
GS
= 1.0 MΩ) V
DGR
60 Vdc
Drain Current
– Continuous T
C
= 25°C (Note 1.)
– Continuous T
C
= 100°C (Note 1.)
– Pulsed (Note 2.)
I
D
I
D
I
DM
±ā115
±ā75
±ā800
mAdc
Gate–Source Voltage
– Continuous
– Non–repetitive (t
p
≤ 50 µs)
V
GS
V
GSM
±ā20
±ā40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–ā55 to
+150
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
2
N–Channel
SOT–23
CASE 318
STYLE 21
025D
02 = Device Code 7002
MARKING DIAGRAM
& PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
Small Signal MOSFET
115 mAMPS, 60VOLTS, R
DS(on)
=7.5
2N7002
N–Channel SOT–23
Small Signal MOSFET
115 mAmps, 60 Volts
RoHS Compliant Product
01-Jun-2002 Rev. A
Page 1 of 5
5 = Y ear 2005
D = W eeks A~z
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