SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
FEATURES
* 60 Volt V
CEO
PARTMARKIN G DETAIL – 702
ABSOLUTE MAXI MUM RATI NGS.
P ARAME TER SYM BOL VALUE UNIT
Drain-Source Voltage V
DS
60 V
Continuous D rain Current at T
amb
=25°C I
D
115 mA
Pulsed Drain Current I
DM
800 mA
Gate-Source Voltage V
GS
± 40
V
Power Dissipa tion at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRIC AL CH AR ACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDIT IONS.
Drain-Source Breakdown
Voltage
BV
DSS
60 V
I
D
=10µA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
12.5VI
D
=250mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
10 nA
V
GS
=± 20V, V
DS
=0V
Zero Ga te Voltage Drain
Current
I
DSS
1
500
µA
µA
V
DS
=48V, V
GS
=0V
V
DS
=48V, V
GS
=0V, T=125°C(2)
On-State Drain Current(1) I
D(on)
500 mA V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Voltage (1)
V
DS( on)
3.75
375
V
mV
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
Static Drain-Source On-State
Resistance (1)
R
DS( on)
7.5
7.5
Ω
Ω
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
Forward Transconductance
(1)(2)
g
fs
80 mS V
DS
=25V, I
D
=500mA
Input Capacitance (2) C
iss
50 pF
Common Source O utput
Capacitance (2)
C
oss
25 pF V
DS
=25V, V
GS
=0V, f= 1MHz
Reverse Transfer Capacitance
(2)
C
rss
5pF
Turn-On Time (2)(3) t
(on)
20 ns
V
DD
≈30V, I
D
=200mA
R
g
=25Ω, R
L
=150Ω
Turn-Off Time (2)(3) t
(off)
20 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
2N7002
D
G
S
SOT23
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