Any changing of specification will not be informed individual
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Elektronische Bauelemente
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DSS
60 Vdc
Drain–Gate Voltage (R
GS
= 1.0 MΩ) V
DGR
60 Vdc
Gate–Source Voltage
– Continuous
– Non–repetitive (t
p
≤ 50 µs)
V
GS
V
GSM
±ā20
±ā40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) T
A
= 25°C
Derate above 25°C
P
D
150
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
θJA
833 °C/W
Junction and Storage Temperature
T
J
, T
stg
–ā55 to
+150
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
2
N–Channel
SOT–523
72
72 = Device Code
MARKING DIAGRAM
& PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
3
1
2
W
Small Signal MOSFET
115 mAMPS, 60VOLTS, R
DS(on)
=7.5
2N7002T
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–523
D
J
K
L
A
C
B
S
H
GV
3
1
2
Dim Min Max
A
1.500 1.700
B
0.750 0.850
C 0.600 0.900
D 0.150 0.300
G
0.900 1.100
H 0.000 0.100
J 0.100 0.200
K 0.100 0.300
L 0.400 0.600
S
1.450 1.750
V 0.250 0.350
All Dimension in mm
SOT-523
01-Jun-2002 Rev. A
Page 1 of 3
RoHS Compliant Product