Elektronische Bauelemente
2N7002T
0.115A , 60V , R
DS(ON)
7.2Ω
N-Channel Enhancement MOSFET
13-Dec-2011 Rev. C Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specifica tion will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
MARKING
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-523 3K 7 inch
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C unless otherwise specified)
Parameter Symbol Rating Unit
Drain-Source Voltage V
DS
60 V
Drain Current I
D
115 mA
Power Dissipation P
D
150 mW
Maximum Junction to Ambient R
θJA
833 °C / W
Operating Junction Temperature Range T
J
150 °C
Operating Storage Temperature Range T
STG
-55~150 °C
Gate
Source
Drain
SOT-523
Top View
A
L
M
C B
D
G
H J
F
K
E
1
2
3
1
2
3
Millimete
Millimete
REF.
Min. Max.
REF.
Min. Max.
A 1.5 1.7 G - 0.1
B 1.45 1.75 H 0.55 REF.
C 0.75 0.85 J 0.1 0.2
D 0.7 0.9 K -
E 0.9 1.1 L 0.5 TYP.
F 0.15 0.25 M 0.25 0.325
K72
