2N7002T
N-Channel Enhancement MOSFET
Elektronische Bauelemente
10-Jun-2010 Rev. B Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
DEVICE MARKING：K72
MAXIMUM RATINGS
(T
A
=25℃ unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Drain-Source Voltage V
DS
60 V
Drain Current I
D
115 mA
Power Dissipation P
D
150 mW
Operating Junction Temperature Range T
J
150 °C
Operating Storage Temperature Range T
STG
-55~150 °C
REF.
Millimete
REF.
Millimete
Min. Max. Min. Max.
A 1.50 1.70 K 0.30 0.50
B 0.75 0.95 M --- 10
C 0.60 0.80 N --- 10
D 0.23 0.33 S 1.50 1.70
G 0.50BSC
J 0.10 0.20
SO
-523
Gate
Source
Drain
