1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
2N7002PW
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 — 22 April 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 150 °C- - 60V
V
GS
gate-source voltage - - ±20 V
I
D
drain current T
amb
=25°C;
V
GS
=10V
--300mA
R
DSon
drain-source on-st a te
resistance
T
j
=25°C;
V
GS
=10V;
I
D
= 500 mA
-11.6Ω